Samsung Unveils Industry’s First 1GB Mobile DRAM

Global leader in advanced memory technology, Samsung Electronics Co. Ltd., today announced a new revolution in the mobile DRAM market. The company has developed industry's first 1GB Mobile DRAM (dynamic random access memory) for mobile products, using 80nm process technology.

The Korean manufacturer promises cost effective and high density mobile solutions with the new chip. The company claims its 1GB, monolithic, Mobile DRAM to be a highly competitive choice for mobile applications over the available double-die stack.

Compatible with a wide range of advanced handset applications as well as with digital still cameras, portable media players and portable gaming products, the 1GB mobile DRAM features a temperature-sensing technique that maximizes the efficiency of self-refresh cycle.

The new chip also reduces power consumption in standby mode by up to 30 percent as compared to other double-die stack alternatives.

The new 80nm process technology supports a more compact chip, thus allowing it to be 20 percent thinner than 512MB double-stack 1GB packages available in the market.

Also known as low-power DDR (double data rate) or synchronous DRAM, the new chip can also be combined with Flash memory in multi-chip packaging including package-on-package designs.

Samsung plans to enter mass production of the new device beginning in the second quarter of 2007.

Spread over 57 countries, Samsung is a leading producer of digital TVs, memory chips, mobile phones and TFT-LCDs.

The company consists of five main business units: Digital Appliance Business, Digital Media Business, LCD Business, Semiconductor Business and Telecommunication Network Business.

The company has always remained in a technological notch. In October this year, the company launched its first 50nm DRAM chip, in early November it announced the development of a 16-chip multi-chip package(MCP) for memory soon to be followed by its new high-speed OneDRAM memory for use in mobile devices.