New Memory to be faster, more reliable

IBM, Infineon and Macronix have announced a joint research initiative to explore the potential of a new form of computer memory technology, coined as phase-change memory (PCM).

PCM is a technology that stores data by changing the state of a special material from an amorphous to a crystalline structure, rather than storing data as an electrical charge.

While still in its early stages, the companies claim that the technology shows potential for high speed, high density storage of data, while retaining data even when power is turned off. Such attributes could be beneficial in applications ranging from high performance servers to consumer electronics.

T.C. Chen, vice president of science and technology, IBM Research, said This collaborative effort reinforces IBM’s commitment to explore new phenomena for memory applications."

"The project will aim to develop the materials for high performance, advanced nonvolatile memory and evaluate these materials in realistic memory chip demonstrations," he added.

"Macronix has a long history of independent and collaborative R&D on non-volatile memories. This alliance on phase-change memory research continues our never ceasing effort to seek the best technology and the best value for our customers. We believe our collective dedication on PCM will help to not only extend the non-volatile memory roadmap beyond the current floating gate, and the 2bits/cell NBit technologies but also open new market opportunities," said Miin Wu, president and CEO, Macronix International.